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2SC6087 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SC6087 | Silicon NPN Epitaxial Type 2SC6087
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6087
Power Amplifier Applications Power Switching Applications
Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)(IC = 1A) High-speed switching: tstg = 0.4 μs (typ) Unit: | Toshiba Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SC6082 | NPN Epitaxial Planar Silicon Transistor |
Sanyo Semicon Device |
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2SC6089 | Color TV Horizontal Deflection Output Applications |
Sanyo Semicon Device |
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2SC6084 | NPN Triple Diffused Planar Silicon Transistor |
Sanyo Semicon Device |
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2SC6080 | NPN Epitaxial Planar Silicon Transistor |
Sanyo Semicon Device |
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2SC6082 | Bipolar Transistor |
ON Semiconductor |
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2SC6087 | Silicon NPN Epitaxial Type |
Toshiba Semiconductor |
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2SC6081 | NPN Epitaxial Planar Silicon Transistor |
Sanyo Semicon Device |
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2SC6083A | NPN Triple Diffused Planar Silicon Transistor |
Sanyo Semicon Device |
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2SC6083 | NPN Triple Diffused Planar Silicon Transistor |
Sanyo Semicon Device |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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