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Datasheet 2SD1766 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SD1766 | NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SD1766
2SD1766 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
0.5 W (Tamb=25℃)
.,LCollector current
ICM: 2 Collector-base voltage
A
OV(BR)CBO:
40 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
I |
 WEJ |
 |
| 4 | 2SD1766 | NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente
2SD1766
2A, 40V NPN Epitaxial Planar Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The 2SD1766 is suited for the output stage of 0.5W audio, voltage regulator, and relay driver.
CLASSIFICATION OF hFE
Product Rank 2SD176 |
 SeCoS |
|
| 3 | 2SD1766 | Plastic-Encapsulate Transistors WILLAS
FM120-M+ 2SD1766 THRU
SOT1-.80A9SPURlaFAsCtEicM-OEUNnTcSaCpHOsTuTKlaYtBeARTRrIEaRnRsEiCsTtIFoIErRsS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
TRANSIST•OBRatc(hNpProNc)ess design, excellent power dissipation offers
FEATURESbetter reverse leakage current and thermal |
 WILLAS |
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| 2 | 2SD1766 | Medium Power Transistor SMD Type
Medium Power Transistor
2SD1766
SOT-89
4.50+0.1 -0.1
1.80+0.1 -0.1
Transistors
Unit: mm 1.50+0.1
-0.1
+0.12.50 -0.1
+0.14.00 -0.1
+0.10.80 -0.1
+0.12.60 -0.1
Features
Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB = 0.2A).
0.48+0.1 -0.1
0.53+0.1 -0.1
0.44+0.1 -0.1
+0.10.40 |
 Kexin |
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