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Datasheet 2SD596 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | 2SD596 | NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SD596
2SD596 TRANSISTOR (NPN)
DFEATURES
TPower dissipation
.,LPCM:
0.2 W (Tamb=25℃)
0. 95¡ À0. 025
1. 02
0. 35 2. 92¡ À0. 05
Collector current
ICM: 0.7
OCollector-base voltage
A
1. 9
V(BR)CBO:
30 V
COperating and storage junction temperature range
TJ, Tstg: -55℃ to +150 |
 WEJ |
 |
| 8 | 2SD596 | Silicon NPN transistor 2SD596
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
高 hFE,与 2SB624 互补。 High hFE, complementary pair with 2SB624.
用途 / Applications
用于音频放大。 Audio |
 BLUE ROCKET ELECTRONICS |
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| 7 | 2SD596 | NPN Plastic Encapsulated Transistor Elektronische Bauelemente
2SD596
0.7A , 30V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current gain Complementary to 2SB624
MARKING DV4
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size 7 inch
SOT-23
A |
 SeCoS |
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| 6 | 2SD596 | BIPOLAR TRANSISTORS RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
2SD596
FEATURES
* Power dissipation
PCM :
0.2 W (Tamb=25OC)
* Collector current
ICM :
0.7 A
* Collector-base voltage
V(BR)CBO : 30
V
* Operating and storage junction temperature range TJ,Tstg: -55OC |
 Rectron |
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