Datasheet 3N163-4 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	3N163-4	P-CHANNEL ENHANCEMENT MODE 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE Linear Integrated Systems MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage 3N163 3N164 Transi	Linear Integrated Systems

3N16 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
3N169	(3N169 - 3N171) MOSFETs Switching	Motorola Semiconductor
3N163	P-CHANNEL ENHANCEMENT MODE 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE Linear Integrated Systems MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltag	Linear Integrated Systems
3N166	Amplifier 3N166 P-CHANNEL MOSFET The 3N166 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N166 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well	Micross

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Número de pieza	Descripción	Fabricantes	PDF
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