| No | Part number | Description ( Function ) | Manufacturers | |
| 5 | 4435 | ARX4435 Transceiver for Macair H009 Specification ARX4435 Transceiver for Macair H009 Specification Features • ARX4435 Transceiver meets Macair H009 data bus specifications • Transmitter can be used to drive clock signal line • Operates with ±15 Volts to ±12 Volts power supplies • Direct replacement for CT1641 and CT1816 devices • Voltage source output for higher bus drive power • Plug-in and flat package availab |
 Aeroflex Circuit Technology |
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| 4 | 4435 | ARX4435N Transceiver for Macair H009 Specification ARX4435 Transceiver for Macair H009 Specification Features • ARX4435 Transceiver meets Macair H009 data bus specifications • Transmitter can be used to drive clock signal line • Operates with ±15 Volts to ±12 Volts power supplies • Direct replacement for CT1641 and CT1816 devices • Voltage source output for higher bus drive power • Plug-in and flat package availab |
Aeroflex Circuit Technology |
|
| 3 | 4435 | P-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel 30-V (D-S) MOSFET 4435 PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.020 @ VGS = −10 V −30 0.030 @ VGS = −4.5 V ID (A) −8.0 −5.0 FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS Compliant APPLICATIONS D Load Switches D Battery Switch Available SO-8 S1 |
 Tuofeng Semiconductor |
|
| 2 | 4435BZ | FDS4435BZ FDS4435BZ P-Channel PowerTrench® MOSFET June 2007 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ Features Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of ±3.8KV typical (note 3) High performance tren |
 Fairchild Semiconductor |
|
| 1 | 4435GM-HF | AP4435GM-HF AP4435GM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant SO-8 S S D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S G -30V 20mΩ -9A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, r |
 Advanced Power Electronics |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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