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Datasheet 4AK19 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 4AK19 | Silicon N Channel MOS FET High Speed Power Switching 4AK19
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-727 (Z) 1st. Edition February 1999 Features
• Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A • 4 V gate drive devices. • High density mounting
Outline
SP |  Hitachi Semiconductor | data |
4AK Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 4AK15 | Silicon N-Channel Power MOS FET Array 4AK15
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) ≤ 0.07 , VGS = 10 V, I D = 8 A R DS(on) ≤ 0.095 , VGS = 4 V, I D = 8 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounti Hitachi Semiconductor data | | |
| 2 | 4AK16 | Silicon N-Channel Power MOS FET Array 4AK16
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) ≤ 0.18 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.25 , VGS = 4 V, I D = 5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mountin Hitachi Semiconductor data | | |
| 3 | 4AK17 | Silicon N-Channel Power MOS FET Array 4AK17
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D = 10 A R DS(on) ≤ 0.065 , VGS = 4 V, I D = 10 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mou Hitachi Semiconductor data | | |
| 4 | 4AK18 | Silicon N-Channel Power MOS FET Array 4AK18
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = 1 A R DS(on) ≤ 0.53 , VGS = 4 V, I D = 1 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mountin Hitachi Semiconductor data | | |
| 5 | 4AK19 | Silicon N Channel MOS FET High Speed Power Switching 4AK19
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-727 (Z) 1st. Edition February 1999 Features
• Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A • 4 V gate drive devices. • High density mounting
Outline
SP Hitachi Semiconductor data | | |
| 6 | 4AK20 | Silicon N-Channel Power MOS FET Array 4AK20
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A R DS(on) 0.35 , VGS = 4 V, I D = 2.5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting � Hitachi Semiconductor data | | |
| 7 | 4AK21 | Silicon N-Channel Power MOS FET Array 4AK21
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 A R DS(on) 0.12 , VGS = 4 V, I D = 4 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Su Hitachi Semiconductor data | |
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