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6N8 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
5 | 6N80 | N-Channel Enhancement Mode Standard Power MOSFET
N-Channel Enhancement Mode
VDSS IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V
ID25 6A 6A
RDS(on) 1.8 Ω 1.4 Ω
Symbol VDSS VDGR V GS VGSM I D25 I DM PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25 °C to 150°C TJ = 25 ° | ETC |
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4 | 6N80 | N-CHANNEL POWER MOSFET 6N80
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
6A, 800V N-CHANNEL POWER MOSFET
1
DESCRIPTION
The UTC 6N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This tec | Unisonic Technologies |
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3 | 6N80 | N-Channel Power MOSFET / Transistor SEMICONDUCTOR
6N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(6A, 800Volts)
The Nell 6N80 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistan | nELL |
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2 | 6N80 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
6N80
·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2Ω(Max) ·Avalanche Energy S | Inchange Semiconductor |
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1 | 6N8 | Double Diode Vari-Mu Pentode | VALVES |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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