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7N60B Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
3 | 7N60B | Hiperfast (tm) Igbt
HiPerFASTTM IGBT
IXGA 7N60B IXGP 7N60B
VCES IC25 VCE(sat) tfi
= 600 V = 14 A = 2 V = 150 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE | IXYS Corporation |
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2 | 7N60B | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
7N60B
·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max) ·Avalanche | Inchange Semiconductor |
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1 | 7N60B | N-CHANNEL MOSFET 7N60(F,B,H)
7A mps,600 Volts N-CHANNEL MOSFET
FEATURE
7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 7N60
ITO-220AB 7N60F
TO-263 7N60B
| CHONGQING PINGYANG |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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