Datasheet 8N65H Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	8N65H	N-CHANNEL MOSFET 8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE  8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 8N65 ITO-220AB 8N65F TO-263 8N65B TO-262 8N65H Absolute Maximum Ratings(TC=25℃,unl	CHONGQING PINGYANG

8N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
8N60C	FQB8N60C Datasheet.es FQB8N60C / FQI8N60C QFET FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has	Fairchild Semiconductor
8N50NZ	N-Channel MOSFET FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m October 2013 Features • RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100% Ava	Fairchild Semiconductor
8N60	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 8N60 ·FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Spec	Inchange

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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