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A821 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
3 | A821S | PNP Transistor - 2SA821S 2SA821S
Transistors
High-voltage Amplifier Transistor (−210V, −30mA)
2SA821S
zFeatures 1) High breakdown voltage, (VCER = −210V ) 2) Complements the 2SC1651S. zExternal dimensions (Unit : mm)
SPT
4.0
3.0
2.0
(15Min.)
3Min.
0.45
2.5 5.0
(1 | ROHM Semiconductor |
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2 | A821 | PNP Plastic Encapsulated Transistor 2SA821
Elektronische Bauelemente -0.03A , -210 V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
G H
High Breakdown Voltage Low Transition Frequency
CLASSIFICAT | Secos |
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1 | A821 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA821
FEATURES
TRANSISTOR (PNP) TO¡ª 92
Power dissipation PCM : 0.25 W£¨ Tamb=25¡æ£© Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO | JIANGSU CHANGJIANG |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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