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Datasheet AFM04P3-212 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | AFM04P3-212 | Low Noise/Medium Power GaAs MESFET Chips Low Noise/Medium Power GaAs MESFET Chips
AFM04P3-212, AFM04P3-213 Features
s Low Noise Figure, 0.6 dB @ 4 GHz s 20 dBm Output Power @ 18 GHz s High Associated Gain, 13 dB @ 4 GHz s High Power Added Efficiency, 25% s Broadband Operation, DC–26 GHz s Available in Tape and Reel Packaging
Source 212 G |  Alpha Industries | data |
AFM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | AFM04P2-000 | Ka Band Power GaAs MESFET Chip Ka Band Power GaAs MESFET Chip
AFM04P2-000 Features
I 21 dBm Output Power @ 18 GHz I High Associated Gain, 9 dB @ 18 GHz I High Power Added Efficiency, 25% I Broadband Operation, DC–40 GHz I 0.25 µm Ti/Pd/Au Gates I Passivated Surface I Through-Substrate Via Hole Grounding
0.327 mm 0.655 mm
Chip Alpha Industries data | | |
| 2 | AFM04P3-000 | Low Noise/Medium Power GaAs MESFET Chip Low Noise/Medium Power GaAs MESFET Chip
AFM04P3-000 Features
s 21 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 25% s Broadband Operation, DC–26 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface
Chip Layout
Description
The AFM04P3-000 is a high p Alpha Industries data | | |
| 3 | AFM04P3-212 | Low Noise/Medium Power GaAs MESFET Chips Low Noise/Medium Power GaAs MESFET Chips
AFM04P3-212, AFM04P3-213 Features
s Low Noise Figure, 0.6 dB @ 4 GHz s 20 dBm Output Power @ 18 GHz s High Associated Gain, 13 dB @ 4 GHz s High Power Added Efficiency, 25% s Broadband Operation, DC–26 GHz s Available in Tape and Reel Packaging
Source 212 G Alpha Industries data | | |
| 4 | AFM06P2-000 | Ka Band Power GaAs MESFET Chip Ka Band Power GaAs MESFET Chip
AFM06P2-000 Features
s 22.5 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC–40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding
0.327 mm 0.655 mm
Chi Alpha Industries data | | |
| 5 | AFM06P3-212 | Ka Band Power GaAs MESFET Chips Ka Band Power GaAs MESFET Chips
AFM06P3-212, AFM06P3-213 Features
s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC–18 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface
Source 212 Gate Drain Source Gate Source Drain 2 Alpha Industries data | | |
| 6 | AFM06P3-213 | Ka Band Power GaAs MESFET Chips Ka Band Power GaAs MESFET Chips
AFM06P3-212, AFM06P3-213 Features
s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC–18 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface
Source 212 Gate Drain Source Gate Source Drain 2 Alpha Industries data | | |
| 7 | AFM08P2-000 | Ka Band Power GaAs MESFET Chip Ka Band Power GaAs MESFET Chip
AFM08P2-000 Features
s 24 dBm Output Power @ 18 GHz s High Power Added Efficiency, 20% s Broadband Operation, DC–40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding
Chip thickness = 0.1 mm.
Drain
0.110 mm
0.395 mm
s High A Alpha Industries data | |
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