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Datasheet AGR21090E Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 AGR21090E   Transistor

AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code-division multiple access (W-CDMA), and single and multicarrier cl
TriQuint Semiconductor
TriQuint Semiconductor
datasheet AGR21090E pdf

AGR210 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
AGR21090E

Transistor

AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code-division multiple access (W-CDMA), and single
TriQuint Semiconductor
TriQuint Semiconductor
datasheet pdf - TriQuint Semiconductor
AGR21060E

Transistor

AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-
TriQuint Semiconductor
TriQuint Semiconductor
datasheet pdf - TriQuint Semiconductor
AGR21045EF

Transistor

Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA
TriQuint Semiconductor
TriQuint Semiconductor
datasheet pdf - TriQuint Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

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