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Datasheet AGR21125E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | AGR21125E | Transistor AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and m |  TriQuint Semiconductor | transistor |
AGR Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | AGR09030E | Lateral MOSFET AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile commun TriQuint Semiconductor mosfet | | |
| 2 | AGR09045E | Lateral MOSFET
AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global sys  PEAK electronics mosfet | | |
| 3 | AGR09070EF | Lateral MOSFET AGR09070EF
Introduction
70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR09070EF Sym Value Unit
The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF pow TriQuint Semiconductor mosfet | | |
| 4 | AGR09085E | Lateral MOSFET AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communication (GSM), e TriQuint Semiconductor mosfet | | |
| 5 | AGR09090EF | Lateral MOSFET AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution ( TriQuint Semiconductor mosfet | | |
| 6 | AGR09130E | Lateral MOSFET t Copy Only
AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communic TriQuint Semiconductor mosfet | | |
| 7 | AGR09180EF | Lateral MOSFET AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile com TriQuint Semiconductor mosfet | |
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