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Datasheet AO3414 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | AO3414 | N-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3414
AO3414 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable |
 Tuofeng Semiconductor |
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| 3 | AO3414 | N-Channel Enhancement Mode Field Effect Transistor AO3414 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Standard Pr |
 Alpha & Omega Semiconductors |
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| 2 | AO3414 | N-Channel Enhancement Mode Field Effect Transistor SMD Type
N-Channel Enhancement Mode Field Effect Transistor KO3414(AO3414)
SOT-23
MOSFET IC
Unit: mm
Features
VDS (V) = 20V
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
RDS(ON) RDS(ON)
63m 87m
(VGS = 2.5V) (VGS = 1.8V)
0.55
RDS(ON)
50m
(VGS = 4.5V)
+0.1 1.3-0.1 |
 Kexin |
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| 1 | AO3414 | N-Channel Enhancement Mode Field Effect Transistor Freescale
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products |
 Freescale |
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