|
|
Datasheet B1016 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | B1016 | PNP Transistor - 2SB1016 2SB1016
PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT
SC-67
!
Complement to 2SD1407
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissip |
ETC |
|
1 | B1016A | PNP Transistor - 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
• High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2.0 V (max) • Complementary to 2SD1407A
Absolute Maximum Ratings (Tc = 25°C)
Character |
Toshiba |
Esta página es del resultado de búsqueda del B1016. Si pulsa el resultado de búsqueda de B1016 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |