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B601 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | B601 | PNP Transistor - 2SB601
DATA SHEET
SILICON POWER TRANSISTOR
2SB601
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
• High-DC current gain due to Darlington connection • | NEC |
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3 | B6010S | Single N-Channel 60-V (D-S) MOSFET B6010S
Single N-Channel 60-V (D-S) MOSFET
General Description
The B6010S is the Single N-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to 60V operation | BiTEK |
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2 | B6010K | N-Channel 60-V (D-S) MOSFET N-Channel 60-V (D-S) MOSFET
B6010K
General Description
The B6010K is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored | BiTEK |
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1 | B6010D | N-Channel 60-V (D-S) MOSFET N-Channel 60-V (D-S) MOSFET
B6010D
General Description
The B6010D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored | BiTEK |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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