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Datasheet B772 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 26 | B772 | PNP MEDIUM POWER TRANSISTOR 2SB772
PNP medium power transistor
Features
■ High current ■ Low saturation voltage ■ Complement to 2SD882
Applications
■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter
Description
The device is a PNP transistor manufactured by using pla |
 STMicroelectronics |
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| 25 | B772 | PNP TRANSISTOR RoHS B772
B772 TRANSISTOR (PNP)
DFEATURES Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM: Collector-base voltage
-3 A
OV(BR)CBO:
-40 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLETOR 3. EMITTER
1 2 3
ICELEC |
 WEJ |
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| 24 | B772 | Plastic-Encapsulate Transistors WILLAS
SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE
FM120-M
B772 THRU FM1200-M
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low p |
 WILLAS |
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| 23 | B772 | PNP Plastic Encapsulated Transistor Elektronische Bauelemente
B772
-3A , -40V PNP Plastic Encapsulated Transistor
FEATURES
Low frequency power amplifier High Current Low Speed Switching
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
CLASSIFICATION OF hFE
Product-Rank
B772-R
Range
60~120
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 SeCoS |
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