|
|
BD115 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
3 | BD115 | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR Transys
Electronics
L I M I T E D
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
BD115 TO-39 Metal Can Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage (RBE<1KΩ Co | TRANSYS |
|
2 | BD115 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER 10*** 10*** 10*** 0.25 0.30 10 10 10 10 0.10** 0.10** 0.10** 0.10** 0.02 0.02 0.02 0.02 0.02 0.10 0.10 0. | Central Semiconductor |
|
1 | BD115 | Bipolar NPN Device BD115
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
| Semelab |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
B8524 | SAW Components |
TDK |
|
BA6343 | Stepping motor driver |
ROHM |
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
www.DataSheetWiki.com | 2020 | Contactez-nous | Link | English |