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BD135 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
24 | BD135 | (BD135 - BD139) Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-126 Plastic-Encapsulated Transistors
BD135/BD137/BD139
FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃)
1. EMITTER 2. COLLECTOR 3. BASE
TRANSISTOR (NPN) TO-126
Collector current 1.5 A ICM: www.datasheetwiki.como | TRANSYS Electronics |
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23 | BD135 | Complementary low voltage transistor BD135 - BD136 BD139 - BD140
Complementary low voltage transistor
Features
■ Products are pre-selected in DC current gain
Application
■ General purpose
Description
These epitaxial planar transistors are mounted in the SOT-32 plastic package. They | STMicroelectronics |
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22 | BD135 | NPN SILICON TRANSISTORS | Siemens Semiconductor Group |
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21 | BD135 | (BD135 - BD139) Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-126 package ·High current ·Complement to type BD136/138/140 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits
PINNING | Savantic |
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20 | BD135 | NPN power transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD135; BD137; BD139 NPN power transistors
Product specification Supersedes data of 1997 Mar 04 1999 Apr 12
Philips Semiconductors
Product specification
NPN power transistors
FEATURES � | NXP Semiconductors |
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19 | BD135 | Plastic Medium Power Silicon NPN Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD135/D
Plastic Medium Power Silicon NPN Transistor
. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain � | Motorola Inc |
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18 | BD135 | (BD135 - BD139) Power Transistors NPN Silicon MCC
Micro Commercial Components
TM
omponents 20736 Marilla Street Chatsworth !"# $
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BD135 BD137 BD139
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• • • • •
0D[LPXP5DWLQJV
Rating Collector-Emitter V | Micro Commercial Components |
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17 | BD135 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. FEATURES
High Current. (Max. : 1.5A)
C E
BD135
EPITAXIAL PLANAR NPN TRANSISTOR
A B D
Low Voltage (Max. : 45V) DC Current Gain : hFE=40Min. @IC=0.15A
Complementary to BD136.
H J K
F G
L
M | KEC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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