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Datasheet BF1009S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | BF1009S | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) BF 1009S
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Q62702-F1628
Pin Configuration 1=S |
Siemens Semiconductor Group |
|
3 | BF1009S | Silicon N-Channel MOSFET Tetrode BF1009S...
Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network
Drain AGC HF Input G2 G1 HF Output + DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Ty |
Infineon Technologies AG |
|
2 | BF1009SR | Silicon N-Channel MOSFET Tetrode BF1009S...
Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network
Drain AGC HF Input G2 G1 HF Output + DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Ty |
Infineon Technologies AG |
|
1 | BF1009SW | Silicon N-Channel MOSFET Tetrode BF1009SW
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
3 4
input stages up to 1GHz
Operating voltage 9V Integrated bias network
Drain AGC HF Input G2 G1 HF Output + DC
2 1
VPS05605
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaut |
Infineon |
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Número de pieza | Descripción | Fabricantes | |
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