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Datasheet CEB02N6 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | CEB02N6 | N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR CEP02N6/CEB02N6
4
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter DYNAMIC CHARACTERISTICS b
Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage CISS COSS CRSS
a
Symbol
Condition
Min Typ Max Unit
250 50 30 1.5
PF PF PF
VDS =25V, VGS = 0V |
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| 4 | CEB02N65A | N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP02N65A CEB02N65A CEF02N65A VDSS 650V 650V 650V RDS(ON) 10.5Ω 10.5Ω 10.5Ω ID 1.3A 1.3A 1.3A d @VGS 10V 10V 10V
CEP02N65A/CEB02N65A CEF02N65A
PRELIMINARY
Super high dense cell design for extremely low RDS(ON). High power and c |
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| 3 | CEB02N65G | N-Channel Enhancement Mode Field Effect Transistor CEP02N65G/CEB02N65G CEF02N65G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP02N65G CEB02N65G CEF02N65G
VDSS 650V 650V
650V
RDS(ON) 5.5Ω 5.5Ω
5.5Ω
ID @VGS 2A 10V 2A 10V 2A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing ca |
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| 2 | CEB02N6A | N-Channel Enhancement Mode Field Effect Transistor CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP02N6A CEB02N6A CEI02N6A CEF02N6A VDSS 650V 650V 650V 650V RDS(ON) 7.5Ω 7.5Ω 7.5Ω 7.5Ω ID 1.5A 1.5A 1.5A 1.5A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON) |
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