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CEB16N10 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | CEB16N10L | N-Channel Enhancement Mode Field Effect Transistor CEP16N10L/CEB16N10L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON). High power and current hand | CET |
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1 | CEB16N10 | N-Channel Enhancement Mode Field Effect Transistor CEP16N10/CEB16N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired | CET |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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