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Datasheet CEB35P10 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEB35P10 | P-Channel Enhancement Mode Field Effect Transistor CEP35P10/CEB35P10 CEF35P10
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead-free plating ; RoHS compliant. TO-2 |
CET |
CEB35 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEB35P10 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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CEB35P03 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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Número de pieza | Descripción | Fabricantes | |
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