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DB-4 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | DB-4 | Bi-directional trigger diodes LESHAN RADIO COMPANY, LTD.
Bi-directional trigger diodes
. 500mW DO-35 . Glass silicon . We declare that the material of product compliance with RoHS requirements.
DB-4
Product Characteristic
± ∆V
∆I = IBO toIF=10mA
1.5 | Leshan Radio Company |
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1 | DB-499D-470 | RF power amplifier using 1 x START499D NPN RF silicon transistor
DB-499D-470
RF power amplifier using 1 x START499D NPN RF silicon transistor
Preliminary Data
Features
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Excellent thermal stability Frequency: 430 - 470 MHz Supply voltage: 3.6 V Output power: 29 dBm | ST Microelectronics |
Numéro de référence | Description détaillée | Fabricant | |
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