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E28F010-90 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | E28F010-90 | 1024K (128K x 8) CMOS FLASH MEMORY 28F010 1024K (128K x 8) CMOS FLASH MEMORY
Y
Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read | Intel Corporation |
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1 | E28F010-90 | 28F010 1024K (128K X 8) CMOS FLASH MEMORY 28F010 1024K (128K x 8) CMOS FLASH MEMORY
Y
Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read | Intel Corporation |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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