|
|
Datasheet ECH8601 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | ECH8601 | General-Purpose Switching Device Applications
Ordering number : ENN7288B
ECH8601
N-Channel Silicon MOSFET
ECH8601
Features
• • • •
General-Purpose Switching Device Applications
Low ON-resistance. Suitable for lithim-ion battery use. Drain common specification. 2.5V drive.
Specifications
Absolute Maximum Ratings |  Sanyo Semicon Device | data |
| 2 | ECH8601M | N-Channel Silicon MOSFET Ordering number : ENA1174
ECH8601M
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8601M General-Purpose Switching Device
Applications
Features
• Low ON-resistance. • Built-in gate protection resistor. • 2.5V drive. • Best suited for LiB charging and discharging switch. • Co |  Sanyo | mosfet |
| 3 | ECH8601M | N-Channel Power MOSFET, Transistor Ordering number : ENA1174A
ECH8601M
N-Channel Power MOSFET
24V, 8A, 23mΩ, Dual ECH8
http://onsemi.com
Features
• Low ON-resistance • 2.5V drive • Common-drain type • Protection diode in
• Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Hal |  ON Semiconductor | mosfet |
| 4 | ECH8601R | N-Channel Silicon MOSFET
Ordering number : ENN8328
ECH8601R
N-Channel Silicon MOSFET
ECH8601R
Features
• • • • •
General-Purpose Switching Device Applications
Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging Switch. Common-drai | Sanyo Semicon Device | mosfet |
ECH Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | ECH06A20 | SBD ６Ａ ２００Ｖ
SBD Type ECH06A20
4 12 3
4 1 23
INSTANTANEOUS FORWARD CURRENT (A)
20 10
5
2 1 0.5
0.2 0
FORWARD CURRENT VS. VOLTAGE
ECH06A20 (per Arm)
Tj=25°C Tj=150°C
0.2 0.4 0.6 0.8 1.0 1.2 INSTANTANEOUS FORWARD VOLTAGE (V)
1.4
AVERAGE FORWARD POWER DISSIPATION (W)
0° 180° θ
COND  ETC data | | |
| 2 | ECH06A20 | SBD ６Ａ ２００Ｖ
SBD Type ECH06A20
4 12 3
4 1 23
INSTANTANEOUS FORWARD CURRENT (A)
20 10
5
2 1 0.5
0.2 0
FORWARD CURRENT VS. VOLTAGE
ECH06A20 (per Arm)
Tj=25°C Tj=150°C
0.2 0.4 0.6 0.8 1.0 1.2 INSTANTANEOUS FORWARD VOLTAGE (V)
1.4
AVERAGE FORWARD POWER DISSIPATION (W)
0° 180° θ
COND ETC data | | |
| 3 | ECH06A20-F | SBD 6A Avg.
200 Volts
SBD
ECH06A20-F
INSTANTANEOUS FORWARD CURRENT (A)
AVERAGE REVERSE POWER DISSIPATION (W)
20 10
5
2 1 0.5
0.2 0
FORWARD CURRENT VS. VOLTAGE ECH06A20 (per Arm)
Tj=25°C Tj=150°C
0.2 0.4 0.6 0.8 1.0 1.2 INSTANTANEOUS FORWARD VOLTAGE (V)
1.4
0° 180° θ
CONDUCTION ANGLE  Nihon Inter Electronics data | | |
| 4 | ECH11 | Triode page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
ECH11
sheet 150839-a 150839-b 160839-a 160839-b 030739-a 030739-b 040739-a 040739-b 050739-a 050739-b 170839-a 170839-b 151039-a 151039-b 161039-a 161039-b 171039-a 171039-b 181039-a 181039-b FP
date 1939 1939 1939 1939 1939 1939 1939 1939  TELEFUNKEN data | | |
| 5 | ECH11 | Triode RFT data | | |
| 6 | ECH11 | Triode page 1 2 3
ECH11 sheet 1 2 3
date 1953.04.04 1953.04.04 1999.06.26
 Philips data | | |
| 7 | ECH200 | Triode - Heptode page 1 2
ECH200
sheet 1 FP
date 1969.01 1999.08.12
Philips data | |
| Esta página es del resultado de búsqueda del ECH8601. Si pulsa el resultado de búsqueda de ECH8601 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |