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Datasheet EFA080A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | EFA080A | Low Distortion GaAs Power FET
Excelics
DATA SHEET
• • • • • • +26.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN |
 Execelies |
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| 2 | EFA080A-100F | Low Distortion GaAs Power FET Excelics
DATA SHEET
• • • • • • HERMETIC 100mil CERAMIC FLANGE PACKAGE +26.0dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILI |
 Execlics |
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| 1 | EFA080A-70 | Low Distortion GaAs Power FET Excelics
DATA SHEET
180 Min. (All Leads)
EFA080A-70
Low Distortion GaAs Power FET
44 19 4
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NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PA |
Execlics |
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