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Datasheet EIA1011-2P Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | EIA1011-2P | 2W Internally Matched Power FET Excelics
• • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.5/8.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE P |  Excelics Semiconductor | data |
EIA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | EIA1011-2P | 2W Internally Matched Power FET Excelics
• • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.5/8.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE P Excelics Semiconductor data | | |
| 2 | EIA1011-4P | 10.7-11.7GHz 4W Internally Matched Power FET Excelics
• • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9/8dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKA Excelics Semiconductor data | | |
| 3 | EIA1111 | High Power Capacitors (S42E Silver Series) Specification Johanson Technology, Inc. 4001 Calle Tecate, Camarillo, CA 93012 (805)-389-1166 www.johansontechnology.com
EIA 1111 High Power Capacitors (S42E Silver Series) Specification 1.0 Scope This capacitor belongs to the Silver Series family and is based on SMD Multilayer Ceramic technology. JTI uses nearl  Johanson Technology capacitor | | |
| 4 | EIA1111-2 | 11.0-11.5 GHz 2-Watt Internally Matched Power FET EIA1111-2
UPDATED 02/17/2006
11.0-11.5 GHz 2-Watt Internally Matched Power FET
.060 MIN.
Excelics
EIA1111-2
.060 MIN.
FEATURES
• • • • • • 11.0– 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34.0 dBm Output Power at 1dB Compression 11.0 dB Power Gain at 1dB Compress Excelics Semiconductor data | | |
| 5 | EIA1111-6 | 11.0-11.5 GHz 6-Watt Internally Matched Power FET EIA1111-6
UPDATED 12/06/2005
11.0-11.5 GHz 6-Watt Internally Matched Power FET
.060 MIN.
FEATURES
• • • • • • 11.0– 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression 35% Power Added Efficiency He Excelics Semiconductor data | | |
| 6 | EIA1114-2 | 11.0-14.0 GHz 2-Watt Internally Matched Power FET EIA1114-2
UPDATED 07/25/2006
11.0-14.0GHz 2-Watt Internally Matched Power FET
FEATURES
• • • • • • • • 11.0– 14.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -36 d Excelics Semiconductor data | | |
| 7 | EIA1114-4 | 11.0-14.0 GHz 4-Watt Internally Matched Power FET EIA1114-4
UPDATED 07/25/2006
11.0-14.0GHz 4-Watt Internally Matched Power FET
FEATURES
• • • • • • • • 11.0– 14.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -36 d Excelics Semiconductor data | |
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