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Datasheet EMA2004 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | EMA2004 | 2.7W Mono Fully Differential Audio Power Amplifier ESMT/EMP
General Description
The EMA2004 is a 2.7W mono fully differential amplifier designed to drive a speaker with at least 4Ω impedance while consuming only 20 mm2 total PCB area in most applications. The device operates from 2.5 V to 5.5 V, drawing only 5mA of quiescent supply current. The EM | Elite Semiconductor | amplifier |
2 | EMA2004-50FF08NRR | 2.7W Mono Fully Differential Audio Power Amplifier ESMT/EMP
General Description
The EMA2004 is a 2.7W mono fully differential amplifier designed to drive a speaker with at least 4Ω impedance while consuming only 20 mm2 total PCB area in most applications. The device operates from 2.5 V to 5.5 V, drawing only 5mA of quiescent supply current. The EM | Elite Semiconductor | amplifier |
3 | EMA2004-50MA08GRR | 2.7W Mono Fully Differential Audio Power Amplifier ESMT/EMP
General Description
The EMA2004 is a 2.7W mono fully differential amplifier designed to drive a speaker with at least 4Ω impedance while consuming only 20 mm2 total PCB area in most applications. The device operates from 2.5 V to 5.5 V, drawing only 5mA of quiescent supply current. The EM | Elite Semiconductor | amplifier |
EMA Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | EMA04N03A | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
4mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Other Excelliance MOS transistor | | |
2 | EMA06N03AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
6mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwis Excelliance MOS transistor | | |
3 | EMA06N03CS | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
6mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Other Excelliance MOS transistor | | |
4 | EMA09N03AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
9mΩ
ID 50A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwis Excelliance MOS transistor | | |
5 | EMA09N03CS | N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
9mΩ
ID 50A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Other Excelliance MOS transistor | | |
6 | EMA1001 | 1W Mono Audio Power Amplifier ESMT/EMP
1W Mono Audio Power Amplifier
General Description
The EMA1001 is an audio power amplifier primarily designed for portable communication applications such as mobile phones and portable multimedia players (PMP). To an 8Ω BTL load, it can deliver 1 watt of continuous average power with less t Elite Semiconductor amplifier | | |
7 | EMA1001-50MA08GRR | 1W Mono Audio Power Amplifier ESMT/EMP
1W Mono Audio Power Amplifier
General Description
The EMA1001 is an audio power amplifier primarily designed for portable communication applications such as mobile phones and portable multimedia players (PMP). To an 8Ω BTL load, it can deliver 1 watt of continuous average power with less t Elite Semiconductor amplifier | |
Esta página es del resultado de búsqueda del EMA2004. Si pulsa el resultado de búsqueda de EMA2004 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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