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EMB12N10A Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | EMB12N10A | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
12mΩ
ID 68A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLU | Excelliance MOS |
Numéro de référence | fiche technique | Fabricant | |
EMB12N10H | Field Effect Transistor |
Excelliance MOS |
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EMB12N10G | Field Effect Transistor |
Excelliance MOS |
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EMB12N10A | Field Effect Transistor |
Excelliance MOS |
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EMB12N10VS | Field Effect Transistor |
Excelliance MOS |
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EMB12N10CS | Field Effect Transistor |
Excelliance MOS |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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