DataSheet.es    


Datasheet EMC3DXV5T1 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1EMC3DXV5T1Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistor

EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Q1 http://onsemi.com 3 R1 2 R2 1 R2 R1 4 Q2 The BRT (Bias Resistor Tra
ON Semiconductor
ON Semiconductor		transistor
2EMC3DXV5T1GDual Common Base-Collector Bias Resistor Transistors

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of tw
ON Semiconductor
ON Semiconductor		transistor


EMC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1EMC04N08EField Effect Transistor

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  75V  D RDSON (MAX.)  4.3mΩ  ID  163A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)�
Excelliance MOS
Excelliance MOS		transistor
2EMC04N08FField Effect Transistor

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  75V  D RDSON (MAX.)  4.4mΩ  ID  86A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
Excelliance MOS
Excelliance MOS		transistor
3EMC07N08EField Effect Transistor

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  75V  D RDSON (MAX.)  6.5mΩ  ID  132A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)�
Excelliance MOS
Excelliance MOS		transistor
4EMC08N08EField Effect Transistor

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  75V  D RDSON (MAX.)  8mΩ  ID  118A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
Excelliance MOS
Excelliance MOS		transistor
5EMC09N08EField Effect Transistor

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  75V  D RDSON (MAX.)  9mΩ  ID  103A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
Excelliance MOS
Excelliance MOS		transistor
6EMC1001SMBus Temperature Sensor

EMC1001 ±1.5°C SMBus Temperature Sensor in Miniature TSOT Features • Self-Contained Internal Temperature Sensor - +0.25°C resolution - ±1.5°C Accuracy +40°C to +85°C • SMBus Address Selected by External Resistor: - Select 1 of 4 per package, 8 addresses available • Maskable Interrupt
Microchip
Microchip		sensor
7EMC1001SMBus Temperature Sensor

EMC1001 1.5°C SMBus Temperature Sensor in Miniature SOT-23 PRODUCT FEATURES General Description The EMC1001 is a tiny SMBus temperature sensor with ±1.5°C accuracy and two interrupts. Packaged in a SOT23-6, the EMC1001 provides an accurate, low-cost, low-current, solution for critical temperatur
SMSC Corporation
SMSC Corporation		sensor



Esta página es del resultado de búsqueda del EMC3DXV5T1. Si pulsa el resultado de búsqueda de EMC3DXV5T1 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap