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EMD10 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | EMD10N70F | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
700V
D
RDSON (MAX.)
1.2Ω
ID 10A G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE | Excelliance MOS |
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3 | EMD10N06E | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
10mΩ
ID
100A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSO | Excelliance MOS |
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2 | EMD10N06A | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
10mΩ
ID 53A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUT | Excelliance MOS |
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1 | EMD10 | Dual Digital Transistors JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
EMD10 Dual Digital Transistors (NPN+PNP)
FEATURES z Both the DTC123J chip and DTA123J chip in a package. z Mounting possible with SOT-563 automatic mou | JCET |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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