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F1008 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | F1008 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. | Polyfet RF Devices |
Numéro de référence | fiche technique | Fabricant | |
F100136 | 4-Stage Counter / Shift Register |
National Semiconductor |
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F1004 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
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F100124 | Hex TTL-to-ECL Translator |
National Semiconductor |
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F1001 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
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F100125 | Hex ECL-to-TTL Translator |
National Semiconductor |
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F100331 | Low Power Triple D Flip-Flop |
National Semiconductor |
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F100329 | Low Power Octal ECL/TTL Bidirectional Translator with Register |
National Semiconductor |
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F100304 | LOW POWER QUINT AND / NAND GATE |
National Semiconductor |
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F1003 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
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F100180 | HIGH-SPEED 6-BIT ADDER |
National Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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