Datasheet F28F010-90 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	F28F010-90	1024K (128K x 8) CMOS FLASH MEMORY 28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS Low Power Consumpti	Intel Corporation

F28F010 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
F28F010-150	1024K (128K x 8) CMOS FLASH MEMORY 28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS	Intel Corporation
F28F010-90	1024K (128K x 8) CMOS FLASH MEMORY 28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS	Intel Corporation
F28F010-65	1024K (128K x 8) CMOS FLASH MEMORY 28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS	Intel Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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