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Datasheet F28M35E20B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | F28M35E20B | F28M35x Concerto Microcontrollers (Rev. I) |  Texas Instruments | controller |
F28 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | F28F008SA | 8-MBIT (1-MBIT x 8) FlashFile MEMORY 28F008SA 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
Extended Temperature Specifications Included
Y High-Density Symmetrically-Blocked Architecture Sixteen 64-Kbyte Blocks
Y Extended Cycling Capability 100 000 Block Erase Cycles 1 6 Million Block Erase Cycles per Chip
Y Automated Byte Write and Block Er  Intel data | | |
| 2 | F28F010-120 | 1024K (128K x 8) CMOS FLASH MEMORY 28F010 1024K (128K x 8) CMOS FLASH MEMORY
Y
Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS Low Power Consumpti  Intel Corporation cmos | | |
| 3 | F28F010-150 | 1024K (128K x 8) CMOS FLASH MEMORY 28F010 1024K (128K x 8) CMOS FLASH MEMORY
Y
Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS Low Power Consumpti Intel Corporation cmos | | |
| 4 | F28F010-65 | 1024K (128K x 8) CMOS FLASH MEMORY 28F010 1024K (128K x 8) CMOS FLASH MEMORY
Y
Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS Low Power Consumpti Intel Corporation cmos | | |
| 5 | F28F010-90 | 1024K (128K x 8) CMOS FLASH MEMORY 28F010 1024K (128K x 8) CMOS FLASH MEMORY
Y
Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS Low Power Consumpti Intel Corporation cmos | | |
| 6 | F28F020 | 2048(256 x 8) CMOS flash memory E
n n n n n n n
12.0 V ±5% VPP
28F020 2048K (256K X 8) CMOS FLASH MEMORY
n n n n
Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Noise Immunity Features ±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX™ Nonvolatile Flas Intel cmos | | |
| 7 | F28M35E20B | F28M35x Concerto Microcontrollers (Rev. I) Texas Instruments controller | |
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