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Datasheet FGA70N33BTD Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | FGA70N33BTD | 70A PDP IGBT FGA70N33BTD 330V, 70A PDP IGBT
FGA70N33BTD
330V, 70A PDP IGBT
Features
• High current capability • Low saturation voltage: VCE(sat) =1.7V @ IC = 70A • High input impedance • Fast switching • RoHS Compliant
Applications
• PDP System
August 2011
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General Description
Using Novel Trench | Fairchild Semiconductor | igbt |
FGA Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | FGA12-302 | Diode, Rectifier American Microsemiconductor diode | | |
2 | FGA12-502 | Diode, Rectifier American Microsemiconductor diode | | |
3 | FGA120N30D | 300V PDP IGBT
FGA120N30D 300V PDP IGBT
June 2006
FGA120N30D
300V PDP IGBT
Features
• High Current Capability • Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 25A • High Input Impedance
Description
Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching Fairchild Semiconductor igbt | | |
4 | FGA15N120AN | NPT Igbt FGA15N120AN
IGBT
FGA15N120AN
General Description
Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and Fairchild Semiconductor igbt | | |
5 | FGA15N120AND | IGBT, Insulated Gate Bipolar Transistor
FGA15N120AND
IGBT
FGA15N120AND
General Description
Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters Fairchild Semiconductor igbt | | |
6 | FGA15N120ANTD | 1200V NPT Trench IGBT
FGA15N120ANTD 1200V NPT Trench IGBT
May 2006
FGA15N120ANTD
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 15A and TC = 25°C • Low switching loss: Eoff, typ = 0.6mJ @ IC = 15A Fairchild Semiconductor igbt | | |
7 | FGA15N120ANTDTU | IGBT, Insulated Gate Bipolar Transistor FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT
FGA15N120ANTDTU
1200 V, 15 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low Saturation Voltage: VCE(sat), typ = 1.9 V @ IC = 15 A and TC = 25C
• Low Switching Loss: Eoff, typ = 0.6 mJ @ IC = 15 A and Fairchild Semiconductor igbt | |
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Número de pieza | Descripción | Fabricantes | |
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