Datasheet FJB102 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FJB102	High Voltage Power Darlington Transistor FJB102 High Voltage Power Darlington Transistor FJB102 High Voltage Power Darlington Transistor Features • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) • Low Collector-Emitter Saturation Voltage • High Collector-Emitter Sustaining Voltage • Monolithic Construction with Built-in Ba	Fairchild Semiconductor

FJB Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FJB5555	NPN Silicon Transistor FJB5555 — NPN Silicon Transistor FJB5555 NPN Silicon Transistor Features • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability Application • Electronic Ballast • Switched Mode Power Supplies June 2013 1 D2-PAK 1.Base 2.Collector 3.Emitter 1 B	Fairchild Semiconductor
FJBE2150D	NPN Silicon Transistor FJBE2150D — ESBC™ Rated NPN Silicon Transistor January 2016 FJBE2150D ESBC™ Rated NPN Silicon Transistor ESBC Features (FDC655 MOSFET) VCS(ON) 0.131 V IC 0.5 A Equiv. RCS(ON) 0.261 Ω(1) • Low Equivalent On Resistance • Very Fast Switch: 150 kHz • Squared RBSOA	Fairchild Semiconductor
FJB3307D	High Voltage Fast Switching NPN Power Transistor FJB3307D — High Voltage Fast Switching NPN Power Transistor March 2012 FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diag	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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