Datasheet FQA7N65C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FQA7N65C	650V N-Channel MOSFET FQA7N65C 650V N-Channel MOSFET FQA7N65C 650V N-Channel MOSFET Features • 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 12 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability February 2006 QFET ® Description These N-	Fairchild Semiconductor

FQA7N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FQA7N80C	800V N-Channel MOSFET FQA7N80C 800V N-Channel MOSFET September 2006 QFET FQA7N80C 800V N-Channel MOSFET Features • • • • • • 7.0A, 800V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 10pF) Fast switching 100% avalanche tested Improved dv/dt capability	Fairchild Semiconductor
FQA7N90	900V N-Channel MOSFET FQA7N90 March 2001 QFET FQA7N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minim	Fairchild Semiconductor
FQA7N65C	650V N-Channel MOSFET FQA7N65C 650V N-Channel MOSFET FQA7N65C 650V N-Channel MOSFET Features • 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 12 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability February 2006 QFET ®	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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