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G30N60 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
6 | G30N60 | HGTG30N60
HGTG30N60A4
Data Sheet August 2003 File Number 4829
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has th | ETC |
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5 | G30N60HS | High Speed IGBT SGP30N60HS SGW30N60HS
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers: - para | Infineon |
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4 | G30N60C3D | HGTG30N60C3D
HGTG30N60C3D
Data Sheet January 2000 File Number 4041.2
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFET | Intersil Corporation |
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3 | G30N60B3D | HGTG30N60B3D HGTG30N60B3D
Data Sheet
April 2004
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transist | Fairchild Semiconductor |
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2 | G30N60B3 | HGTG30N60B3 HGTG30N60B3
Data Sheet November 2013
600 V, NPT IGBT
The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching appli | Fairchild Semiconductor |
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1 | G30N60A4D | SMPS Series N-Channel IGBT HGTG30N60A4D
Data Sheet September 2004
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has | Fairchild Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
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Micross |
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TDK |
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ROHM |
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