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Datasheet G30N60B3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | G30N60B3 | HGTG30N60B3 HGTG30N60B3
Data Sheet November 2013
600 V, NPT IGBT
The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where lo |
 Fairchild Semiconductor |
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| 1 | G30N60B3D | HGTG30N60B3D HGTG30N60B3D
Data Sheet
April 2004
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a |
Fairchild Semiconductor |
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