|
|
Datasheet G30N60B3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | G30N60B3 | HGTG30N60B3 HGTG30N60B3
Data Sheet November 2013
600 V, NPT IGBT
The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where lo |
Fairchild Semiconductor |
|
1 | G30N60B3D | HGTG30N60B3D HGTG30N60B3D
Data Sheet
April 2004
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a |
Fairchild Semiconductor |
Esta página es del resultado de búsqueda del G30N60B3. Si pulsa el resultado de búsqueda de G30N60B3 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |