G6402 PDF Datasheet

Pb Free Plating Product CORPORATION G6402 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B BVDSS RDS(ON) ID -20V 65m -4.2A The G6402 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G6402 is universally preferred for all commercial-industrial surfac

DMG6402LDM N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features • • • • • • • Low RDS(ON) Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant

NAEDWVAPNRCOED IUNCFTORMATION DMG6402LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(on) max 30m @ VGS = 10V 42m @ VGS = 4.5V ID TA = +25°C 6A 5A Description This new generation MOSFET has been designed to minimize the onstate resistance (R

( DataSheet : ) LMG6402PLFR FEATURES ♦ Black on Grey Film STN Type ♦ Reflective Mode MECHANICAL DATA Item Module Dimensions Viewing Area Resolution Dot Size Dot Pitch Weight Value 159.4*101*9.5 126*71 240*128 0.47*0.47 0.5*0.5 150 Unit mm mm dots mm mm g

2N6400 Series Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Fea

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half–wave silicon gate–controlled, s