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Datasheet GA040TH65 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | GA040TH65 | Silicon Carbide Thyristor Silicon Carbide Thyristor
Features
• 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor • Fast turn on characteristics • Lowest in class Qrr/IT(AVM)
Applications
• Grid Tied Solar Invert | GeneSiC | thyristor |
2 | GA040TH65-CAU | Silicon Carbide Thyristor Silicon Carbide Thyristor
Features
• 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM)
Applications
• Grid Tied Solar Inverters • Wind Power Inverters • HVDC Power Conversion • Utility Scale Power Convers | GeneSiC | thyristor |
GA0 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | GA01PNS100-CAL | Silicon Carbide PiN Diode Chip Silicon Carbide PiN Diode Chip
Die Datasheet
GA01PNS100-CAL
VRRM IF @ 25 oC
QC
= 10000 V = 2A = 5 nC
Features
10 kV blocking 210 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching
Advantages GeneSiC diode | | |
2 | GA01PNS100-CAU | Silicon Carbide PiN Diode Chip Silicon Carbide PiN Diode Chip
Die Datasheet
GA01PNS100-CAU
VRRM IF @ 25 oC
QC
= 10000 V = 2A = 5 nC
Features
10 kV blocking 210 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching
Advantages GeneSiC diode | | |
3 | GA01PNS150-CAU | Silicon Carbide PiN Diode Chip Silicon Carbide PiN Diode Chip
Die Datasheet
GA01PNS150-CAU
VRRM IF @ 25 oC
= 15000 V = 1A
Features
15 kV blocking 210 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching
Advantages
Highe GeneSiC diode | | |
4 | GA01PNS80-CAL | Silicon Carbide PiN Diode Chip Silicon Carbide PiN Diode Chip
Die Datasheet
GA01PNS80-CAL
VRRM IF @ 25 oC
= 8000 V = 2A
Features
8 kV blocking 210 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching
Die Size = 2.4 mm x 2. GeneSiC diode | | |
5 | GA01PNS80-CAU | Silicon Carbide PiN Diode Chip Silicon Carbide PiN Diode Chip
Die Datasheet
GA01PNS80-CAU
VRRM IF @ 25 oC
= 8000 V = 2A
Features
8 kV blocking 210 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching
Advantages
Reduced GeneSiC diode | | |
6 | GA03IDDJT30-FR4 | Isolated Gate Driver Isolated Gate Driver
Gate Driver for SiC SJT with Output and Signal Isolation
Features
Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards Multiple Internal level topology for low drive losses High-side drive capable with 3000 V isolation 5000 V Sign GeneSiC driver | | |
7 | GA03JT12-247 | Junction Transistor
Normally – OFF Silicon Carbide Junction Transistor
Features
175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Tempera GeneSiC transistor | |
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Número de pieza | Descripción | Fabricantes | |
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