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Datasheet GA100 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | GA100 | SCRs Nuclear Radiation Resistant/ Planar |
 Microsemi Corporation |
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| 8 | GA100NA60U | INSULATED GATE BIPOLAR TRANSISTOR www.DataSheet.co.kr
PD - 94290
GA100NA60U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolated packag |
 International Rectifier |
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| 7 | GA100NA60UP | Insulated Gate Bipolar Transistor www.DataSheet.co.kr
GA100NA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
FEATURES
• Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • F |
 Vishay Siliconix |
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| 6 | GA100TS120U | HALF-BRIDGE IGBT INT-A-PAK PD - 50060B
GA100TS120U
"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- so |
International Rectifier |
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