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Datasheet GE20N03 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 GE20N03   N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GE20N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 52m 20A The GE20N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe
 GTM
GTM		 datasheet GE20N03 pdf

GE20 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
GE200NB60S

N-CHANNEL IGBT

STGE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH™ IGBT General features TYPE VCES VCE(sat) (typ.) 1.2V 1.3V IC 150A 200A TC 100°C 25°C STGE200NB60S 600V ■ ■ ■ ■ ■ High input impedance (voltage driven) Low on-voltage drop (Vcesat)
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
GE20N03

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GE20N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 52m 20A The GE20N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resi
 GTM
GTM		 datasheet pdf - GTM
GE2026

NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/09/05 REVISED DATE : GE2026 Description Features NP N E PITAX IAL PL ANAR T RANS ISTO R The GE2026 is designed for general purpose application. Low Collector Saturation Voltage : VCE (sat) =1.0V (Max.) @ IC=2A, IB=0.2A, Package Dimensions
 GTM
GTM		 datasheet pdf - GTM


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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