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Datasheet GE6679 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | GE6679 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/06/28 REVISED DATE :
GE6679
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 9m -75A
The GE6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec | GTM | mosfet |
GE6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | GE6061 | (GE6061 / GE6063) CMOS IC GE6061/GE6063
GE6061/GE6063 General Description
1/6 SIrene sounds
The GE6061/GE6063 is a CMOS IC tor siren/alarm appilication.Ir has Vdd sounds and the GE6061/GE6063 will be generated in cycling sequence.
control 1/6 siren
GE6061/GE6063 Features
CMOS process Low stand-by current On-chip RC oscil SilvanChip cmos | | |
2 | GE6063 | (GE6061 / GE6063) CMOS IC GE6061/GE6063
GE6061/GE6063 General Description
1/6 SIrene sounds
The GE6061/GE6063 is a CMOS IC tor siren/alarm appilication.Ir has Vdd sounds and the GE6061/GE6063 will be generated in cycling sequence.
control 1/6 siren
GE6061/GE6063 Features
CMOS process Low stand-by current On-chip RC oscil SilvanChip cmos | | |
3 | GE6065A | CMOS IC GE6065A
GE6065A General Description
1/6 SIrene sounds
The GE6065A is a CMOS IC tor siren/alarm appilication.Ir has Vdd and the GE6065A will be generated in cycling sequence.
control 1/6 siren sounds
GE6065A Features
CMOS process Low stand-by current On-chip RC oscillator Auto power off function SilvanChip cmos | | |
4 | GE6065B | 1/6 Tones Alarm Generator 1/6 Tones Alarm Generator General Description
GE6065B
GE6065B is a CMOS process to manufacture the alarm sound generator ASIC, built-in voltage regulator circuit, reset capacitor, can directly enter the high-voltage power supply, and omit the diode and the reset capacitor voltage regulator. GE6065 SilvanChip data | | |
5 | GE60L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/03/01 REVISED DATE :2005/12/12B
GE60L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 13m 50A
The GE60L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an GTM mosfet | | |
6 | GE60N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/01/25 REVISED DATE :2005/10/19B
GE60N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 16.5m 55A
The GE60N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance GTM mosfet | | |
7 | GE60T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/22 REVISED DATE :
GE60T03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 12m 45A
The GE60T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe GTM mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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