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Datasheet GE9973 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GE9973 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/08/30 REVISED DATE :
GE9973
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 80m 14A
The GE9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effect |  GTM | mosfet |
GE9 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GE90N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/06/24 REVISED DATE :
GE90N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 4m 85A
The GE90N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec GTM mosfet | | |
| 2 | GE90T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/03/01 REVISED DATE :2005/12/01B
GE90T03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 5m 75A
The GE90T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and GTM mosfet | | |
| 3 | GE9971 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/03 REVISED DATE :
GE9971
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 36m 25A
The GE9971 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effect GTM mosfet | | |
| 4 | GE9973 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/08/30 REVISED DATE :
GE9973
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 80m 14A
The GE9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effect GTM mosfet | |
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