Datasheet GT10Q311 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GT10Q311	Insulated Gate Bipolar Transistor	Toshiba Semiconductor

GT10Q Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GT10Q301	Insulated Gate Bipolar Transistor GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications Unit: mm · · · · · The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V	Toshiba Semiconductor
GT10Q101	High Power Switching Applications GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximu	Toshiba Semiconductor
GT10Q311	Insulated Gate Bipolar Transistor	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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