|
|
Datasheet GWM120-0075X1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GWM120-0075X1 | Three phase full Bridge www.DataSheet.co.kr
GWM 120-0075X1
Three phase full Bridge
with Trench MOSFETs in DCB isolated high current package
L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L-
VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW
Straight leads
Surface Mount Device
G2 S2
MOSFETs Symbol VDSS VGS ID25 ID90 IF25 |  IXYS Corporation | data |
GWM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GWM100-0085X1 | Three phase full Bridge www.DataSheet.co.kr
GWM100-0085X1
Three phase full Bridge
with Trench MOSFETs in DCB isolated high current package
L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L-
VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW
Straight leads
Surface Mount Device
G2 S2
MOSFETs Symbol VDSS VGS ID25 ID90 ID110 IXYS Corporation data | | |
| 2 | GWM100-01X1 | Three phase full Bridge www.DataSheet.co.kr
GWM 100-01X1
Three phase full Bridge
with Trench MOSFETs in DCB isolated high current package
L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L-
VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW
Straight leads
Surface Mount Device
G2 S2
MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF IXYS Corporation data | | |
| 3 | GWM120-0075P3 | Six-Pack MOSFET Modules
GWM 120-0075P3
Three phase full bridge
with Trench MOSFETs in DCB isolated high current package
L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 G6 S6 LS5 G5
VDSS = 75 V ID25 = 125 A RDSon typ. = 3.7 mΩ
Pins Gate
Pow
s er Pin
MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25°C TC = IXYS Corporation mosfet | | |
| 4 | GWM120-0075X1 | Three phase full Bridge www.DataSheet.co.kr
GWM 120-0075X1
Three phase full Bridge
with Trench MOSFETs in DCB isolated high current package
L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L-
VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW
Straight leads
Surface Mount Device
G2 S2
MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IXYS Corporation data | | |
| 5 | GWM160-0055P3 | Three phase full bridge
GWM 160-0055P3
Three phase full bridge
with Trench MOSFETs in DCB isolated high current package
Preliminary data
L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 LG6 S6 S5 G5
VDSS = 55 V = 160 A ID25 RDSon typ. = 2.3 mΩ
MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25°C TC = 90°C T IXYS Corporation data | | |
| 6 | GWM160-0055X1 | Three phase full Bridge www.DataSheet.co.kr
GWM 160-0055X1
Three phase full Bridge
with Trench MOSFETs in DCB isolated high current package
L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L-
VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW
Straight leads
Surface Mount Device
G2 S2
MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IXYS Corporation data | | |
| 7 | GWM180-004X2 | Three phase full Bridge www.DataSheet.co.kr
GWM 180-004X2
Three phase full Bridge
with Trench MOSFETs in DCB isolated high current package
Preliminary data
G1 S1 L+ G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L-
VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW
Straight leads
Surface Mount Device
G2 S2
MOSFETs Symbol VDSS VGS IXYS Corporation data | |
| Esta página es del resultado de búsqueda del GWM120-0075X1. Si pulsa el resultado de búsqueda de GWM120-0075X1 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |