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Datasheet HU830 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | HU830 | 500V N-Channel MOSFET HD830_HU830
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 2.5 A
2.5 --
Off Characteristics
BVDSS ΔBVDSS |
JINGJIAZHEN |
HU Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
HUF76129S3S | 56A/ 30V/ 0.016 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs |
Fairchild Semiconductor |
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HUB12 | Engineered to Break-Out Audio Science Multi-Channel Audio Cards |
StudioHub |
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HU60N03 | 30V N-Channel MOSFET |
HAOLIN |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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