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IDC08S60C Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | IDC08S60C | 2nd generation thinQ! SiC Schottky Diode
IDC08S60C
2nd generation thinQ!TM SiC Schottky Diode
FEATURES: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switchin | Infineon Technologies |
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1 | IDC08S60CE | Schottky Diode IDC08S60CE
2nd generation thinQ!TM SiC Schottky Diode
Features: Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recove | Infineon Technologies |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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